BC847BT-7-F 编带
Design various electronic circuits with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-523
封装 SOT-523
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC847BT-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC847C-7-F 美台 | 功能相似 | BC847BT-7-F和BC847C-7-F的区别 |
BC847BT-TP 美微科 | 功能相似 | BC847BT-7-F和BC847BT-TP的区别 |