DIODES INC. BC857C-7-F 单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE
Zetex brings you the solution to your high-voltage BJT needs with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
频率 200 MHz
额定电压DC -45.0 V
额定电流 -100 mA
针脚数 3
极性 PNP
耗散功率 300 mW
增益频宽积 200 MHz
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 300 mW
直流电流增益hFE 600
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 350 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.05 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC857C-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC857C-7 美台 | 类似代替 | BC857C-7-F和BC857C-7的区别 |
BC857C-TP 美微科 | 功能相似 | BC857C-7-F和BC857C-TP的区别 |
BC857CLT3G 安森美 | 功能相似 | BC857C-7-F和BC857CLT3G的区别 |