



BCX41TA 编带
Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 125 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 100 MHz
极性 NPN
耗散功率 0.33 W
击穿电压集电极-发射极 125 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 25 @100µA, 1V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BCX41TA Diodes 美台 | 当前型号 | 当前型号 |
BCX41E6327HTSA1 英飞凌 | 功能相似 | BCX41TA和BCX41E6327HTSA1的区别 |