Trans GP BJT NPN 80V 1A 1000mW Automotive 4Pin3+Tab SOT-89 T/R
- 双极 BJT - 单 NPN 150MHz 表面贴装型 SOT-89-3
得捷:
TRANS NPN 80V 1A SOT89-3
立创商城:
NPN 80V 1A
艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BCX56TA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
Allied Electronics:
Trans GP BJT NPN 80V 1A 4Pin SOT223
安富利:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R
TME:
Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Verical:
Trans GP BJT NPN 80V 1A Automotive 4-Pin3+Tab SOT-223 T/R
DeviceMart:
Trans GP BJT NPN 80V 1A Automotive 4-Pin, SOT-89
Win Source:
TRANS NPN 80V 1A SOT89
频率 150 MHz
极性 NPN
耗散功率 2 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 1A
最小电流放大倍数hFE 40 @150mA, 2V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89
封装 SOT-89
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCX56TA Diodes 美台 | 当前型号 | 当前型号 |
BCX56-16TA 美台 | 完全替代 | BCX56TA和BCX56-16TA的区别 |
BCX56-10TA 美台 | 完全替代 | BCX56TA和BCX56-10TA的区别 |
BCX5616TC 美台 | 类似代替 | BCX56TA和BCX5616TC的区别 |