BC807-16-7-F 编带
Thanks to Zetex, your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
耗散功率 0.35 W
击穿电压集电极-发射极 45 V
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 310 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
高度 0.98 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC807-16-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC807-16-7 美台 | 完全替代 | BC807-16-7-F和BC807-16-7的区别 |
BCX17TA 美台 | 类似代替 | BC807-16-7-F和BCX17TA的区别 |
BCX17T116 罗姆半导体 | 功能相似 | BC807-16-7-F和BCX17T116的区别 |