Trans GP BJT PNP 45V 0.1A 200mW Automotive 3Pin SOT-323 T/R
Thanks to Zetex, your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 200 MHz
额定电压DC -45.0 V
额定电流 -100 mA
极性 PNP
耗散功率 200 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 200 mW
直流电流增益hFE 520
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
封装 SOT-323-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC857CW-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC857CW-7 美台 | 类似代替 | BC857CW-7-F和BC857CW-7的区别 |
BC857CW,115 安世 | 功能相似 | BC857CW-7-F和BC857CW,115的区别 |
BC860CW,115 安世 | 功能相似 | BC857CW-7-F和BC860CW,115的区别 |