CIG21W4R7MNE

CIG 系列 2012 4.7 uH 20 % 0.65 A SMD 屏蔽 功率电感

4.7µH Shielded Multilayer Inductor 650mA 300mOhm 0805 2012 Metric

得捷:
FIXED IND 4.7UH 650MA 300MOHM SM

艾睿:
This power chip CIG21W4R7MNE surface mount inductor from Samsung Electro-Mechanics is ideal for applications where space is a major influence of circuit design. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a tolerance of 20%. This product is 2.2 mm long, 1 mm tall and 1.45 mm deep. Its test frequency is 1M Hz. This device is made with multi-layer technology. This SMD inductor has a maximum DC current of 650m A with a maximum resistance of 300mTyp Ohm. It has an inductance of 4.7u H.

富昌:
CIG 系列 2012 4.7 uH 20 % 0.65 A SMD 屏蔽 功率电感

Verical:
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 0.65A 0.3Ohm DCR 0805 T/R

儒卓力:
**CIG21W 4,7uH 650mA 20% MLT **

Win Source:
4.7μH Shielded Multilayer Inductor 650mA 300 mOhm 0805 2012 Metric