STQ1NK60ZR-AP

STMICROELECTRONICS  STQ1NK60ZR-AP  功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V

通孔 N 通道 600 V 300mA（Tc） 3W（Tc） TO-92-3

立创商城:
N沟道 600V 300mA

得捷:
MOSFET N-CH 600V 300MA TO92-3

e络盟:
晶体管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STQ1NK60ZR-AP power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology.

安富利:
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Chip1Stop:
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Verical:
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Newark:
# STMICROELECTRONICS  STQ1NK60ZR-AP  Power MOSFET, N Channel, 300 mA, 600 V, 13 ohm, 10 V, 3.75 V

儒卓力:
**N-CH 600V 0,3A 15Ohm TO-92 **

Win Source:
MOSFET N-CH 600V 0.3A TO-92