NPN硅外延平面型用于高速切换高速开关低集电极到发射极饱和电压VCE(SAT)S-迷你型封装,通过带盒包装允许减小设备规模和自动插入允许与2SA1739配对使用
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 40V 集电极连续输出电流ICCollector CurrentIC| 100mA/0.1A 截止频率fTTranstion FrequencyfT| 450MHz 直流电流增益hFEDC Current GainhFE| 60~120 管压降VCE(sat)Collector-Emitter Saturation Voltage| 170mV/0.17V 耗散功率PcPower Dissipation| 150mW/0.15W Description & Applications| Silicon NPN epitaxial planer type For high speed switching High-speed switching Low collector to emitter saturation voltage VCEsat S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Allowing pair use with 2SA1739 描述与应用| NPN硅外延平面型 用于高速切换 高速开关 低集电极到发射极饱和电压VCE(SAT) S-迷你型封装,通过带盒包装允许减小设备规模和自动插入 允许与2SA1739配对使用