NOR Flash Parallel 5V 2M-bit 256K x 8/128K x 16 80ns 48Pin TSOP
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for embedded code execution applications, such as networking infrastructure and office automation.
SmartVoltage Technology
Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes
Increased Programming Throughput at 12 V VPP
Very High-Performance Read
2-, 4-Mbit: 60 ns Access Time
8-Mbit: 70 ns Access Time
x8 or x8/x16-Configurable Data Bus
Low Power Consumption
Max 60 mA Read Current at 5 V
Auto Power Savings: <1 mA Typical Standby Current
Optimized Array Blocking Architecture
16-KB Protected Boot Block
Two 8-KB Parameter Blocks
96-KB and 128-KB Main Blocks
Top or Bottom Boot Locations
Extended Temperature Operation
–40 °C to +85 °C
industry-Standard Packaging
40, 48-Lead TSOP, 44-Lead PSOP
Extended Block Erase Cycling
100,000 Cycles at Commercial Temp
10,000 Cycles at Extended Temp
Hardware Data Protection Feature
Absolute Hardware-Protection for Boot Block
Write Lockout during Power Transitions
Automated Word/Byte Program and Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
Provides Low-Power Mode and Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
0.6 µETOX IV Initial Production
0.4 µETOX V Later Production
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
E28F200B5T80 Intel 英特尔 | 当前型号 | 当前型号 |
TE28F200B5T80 英特尔 | 功能相似 | E28F200B5T80和TE28F200B5T80的区别 |
PA28F200B5T60 英特尔 | 功能相似 | E28F200B5T80和PA28F200B5T60的区别 |
E28F200B5T60 英特尔 | 功能相似 | E28F200B5T80和E28F200B5T60的区别 |