600V N沟道MOSFET 600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
• 10A, 600V, RDSon = 0.73Ω @VGS = 10 V
• Low gate charge typical 44 nC
• Low Crss typical 18 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 600 V
额定电流 10.0 A
漏源极电阻 730 mΩ
极性 N-Channel
耗散功率 192 W
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 10.0 A
上升时间 69 ns
输入电容Ciss 2040pF @25VVds
额定功率Max 192 W
下降时间 77 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 192W Tc
安装方式 Through Hole
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99