FDZ298N

N沟道2.5 V指定的PowerTrench MOSFET BGA N-Channel 2.5 V Specified PowerTrench BGA MOSFET

N-Channel 2.5 V Specified Power Trench BGA MOSFET General Description Combining ’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the minimizes both PCB space and RDSON. This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDSON. Applications · Battery management · Battery protection Features · Ultra-thin package · Outstanding thermal transfer characteristics · Ultra-low Qg x RDSON figure-of-merit · High power and current handling capability.