GS8161Z36BGT-150

GS8161Z36BGT-150图片1
GS8161Z36BGT-150中文资料参数规格
物理参数

工作温度 0℃ ~ 70℃

其他

Minimum Operating Supply Voltage 2.3|3 V

Number of Words 512 kWords

Density 18 Mb

Timing Type Synchronous

Data Rate Architecture SDR

Architecture Flow-Through|Pipelined

Maximum Operating Current 190@Flow-Through|205@Pipelined mA

Operating Temperature 0 to 70 °C

Screening Level Commercial

Mounting Surface Mount

Max Processing Temp 260

Lead Finish Matte Tin

Number of Bits per Word 36 Bit

Number of I/O Lines 36 Bit

Number of Ports 4

Address Bus Width 19 Bit

Maximum Clock Rate 133.3@Flow-Through|150@Pipelined MHz

Maximum Random Access Time 7.5@Flow-Through|3.8@Pipelined ns

Typical Operating Supply Voltage 2.5|3.3 V

Maximum Operating Supply Voltage 2.7|3.6 V

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买GS8161Z36BGT-150
型号: GS8161Z36BGT-150
制造商: GSI
描述:SRAM Chip Sync Quad 2.5V/3.3V 18M-bit 512K x 36 7.5ns/3.8ns 100Pin TQFP Tray

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