IXYS SEMICONDUCTOR IXGP20N120A3 单晶体管, IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-220AB, 3 引脚
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
VCES= 1200V
IC110 = 20A
VCEsat ≤2.5V
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
得捷:
IGBT 1200V 40A 180W TO220
贸泽:
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
e络盟:
单晶体管, IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-220AB, 3 引脚
艾睿:
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin3+Tab TO-220AB
富昌:
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
Verical:
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin3+Tab TO-220AB
Newark:
# IXYS SEMICONDUCTOR IXGP20N120A3 IGBT Single Transistor, 40 A, 2.3 V, 180 W, 1.2 kV, TO-220AB, 3 Pins
DeviceMart:
IGBT 1200V 40A 180W TO220
针脚数 3
耗散功率 180 W
击穿电压集电极-发射极 1200 V
额定功率Max 180 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 180000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.66 mm
宽度 4.83 mm
高度 16 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXGP20N120A3 IXYS Semiconductor | 当前型号 | 当前型号 |
IXGP10N60A IXYS Semiconductor | 功能相似 | IXGP20N120A3和IXGP10N60A的区别 |