INFINEON IPT007N06NATMA1 晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
OptiMOS™5 功率 MOSFET
得捷:
MOSFET N-CH 60V 300A 8HSOF
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPT007N06NATMA1, 300 A, Vds=60 V, 8引脚 HSOF封装
艾睿:
Create an effective common drain amplifier using this IPT007N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 375000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 60V 300A 8-Pin HSOF T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 300A; 375W; PG-HSOF-8-1
Verical:
Trans MOSFET N-CH 60V 300A Automotive 9-Pin8+Tab HSOF T/R
Newark:
MOSFET Transistor, N Channel, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
额定功率 375 W
针脚数 8
极性 N-Channel
耗散功率 375 W
阈值电压 2.8 V
输入电容 16000 pF
漏源极电压Vds 60 V
连续漏极电流Ids 300A
上升时间 18 ns
输入电容Ciss 16000pF @30VVds
下降时间 22 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 375W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-HSOF-8-1
长度 10.58 mm
宽度 10.1 mm
高度 2.4 mm
封装 PG-HSOF-8-1
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, 通信与网络, Point-of-load POL, Lighting, Power Management, Communications & Networking, Lighting, , Communications, Telecom, Automotive, Power Management
RoHS标准
含铅标准 Lead Free
