IPW60R280P6FKSA1

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IPW60R280P6FKSA1概述

INFINEON  IPW60R280P6FKSA1  功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V

The IPW60R280P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

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Extremely low losses due to very low figure of merit RDS ON x Qg and EOSS
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Very high commutation ruggedness
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Easy to use
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Increased dV/dt ruggedness
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Halogen-free
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Qualified according to JEDEC for target applications
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Higher Vth
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Optimized integrated Rg
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Improved efficiency especially in light load condition
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Better efficiency in soft switching applications due to earlier turn-OFF
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Suitable for hard and soft-switching topologies
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Optimized balance of efficiency and ease of use and good controllability of switching behaviour
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High robustness and better efficiency
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Outstanding quality and reliability

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

IPW60R280P6FKSA1中文资料参数规格
技术参数

额定功率 104 W

针脚数 3

漏源极电阻 0.252 Ω

极性 N-Channel

耗散功率 104 W

阈值电压 4 V

漏源极电压Vds 600 V

连续漏极电流Ids 13.8A

上升时间 6 ns

输入电容Ciss 1190pF @100VVds

额定功率Max 104 W

下降时间 6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 104W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

制造应用 Industrial, 电源管理, 通信与网络, 工业, , telecom rectifier,, PWM stages TTF, LLC for, Communications & Networking, Power Management, PFC stages for

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

数据手册

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型号: IPW60R280P6FKSA1
描述:INFINEON  IPW60R280P6FKSA1  功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V

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