Infineon CoolMOS™CE/CFD 功率 MOSFET
N-Channel 500V 1.7A Tc 18W Tc Surface Mount PG-TO252-3
得捷:
MOSFET N-CH 500V 1.7A TO252-3
欧时:
### Infineon CoolMOS™CE/CFD 功率 MOSFET
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD50R3K0CEBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 18000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 550V 1.7A 3-Pin TO-252 T/R
TME:
Transistor: N-MOSFET; unipolar; 500V; 1.7A; 18W; PG-TO252-3
Verical:
Trans MOSFET N-CH 500V 2.6A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 500V 1.7A PG-TO-252
额定功率 18 W
通道数 1
极性 N-CH
耗散功率 26 W
阈值电压 3 V
漏源极电压Vds 500 V
连续漏极电流Ids 1.7A
上升时间 5.8 ns
输入电容Ciss 84pF @100VVds
额定功率Max 18 W
下降时间 49 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 18W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.41 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD50R3K0CEBTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD50R3K0CEAUMA1 英飞凌 | 类似代替 | IPD50R3K0CEBTMA1和IPD50R3K0CEAUMA1的区别 |