晶体管, MOSFET, N沟道, 5.7 A, 600 V, 0.68 ohm, 10 V, 3 V
IPD60R750E6, SP001117728
得捷:
IPD60R750 - 600V COOLMOS N-CHANN
立创商城:
N沟道 600V 5.7A
贸泽:
MOSFET N-Ch 650V 5.7A DPAK-2
e络盟:
晶体管, MOSFET, N沟道, 5.7 A, 600 V, 0.68 ohm, 10 V, 3 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPD60R750E6ATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 48000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 5.7A 3-Pin TO-252 T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 3.6A; 48W; PG-TO252-3
Verical:
Trans MOSFET N-CH 600V 5.7A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 600V 5.7A TO252
通道数 1
针脚数 3
漏源极电阻 680 mΩ
极性 N-CH
耗散功率 48 W
阈值电压 2.5 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 5.7A
上升时间 7 ns
输入电容Ciss 373pF @100VVds
额定功率Max 48 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 48W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅