INFINEON IPP60R250CPXKSA1 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
CoolMOS™CP 功率 MOSFET
得捷:
MOSFET N-CH 650V 12A TO220-3
立创商城:
N沟道 650V 12A
欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPP60R250CPXKSA1, 12 A, Vds=650 V, 3引脚 TO-220封装
贸泽:
MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP
e络盟:
晶体管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPP60R250CPXKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 104000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans MOSFET N-CH 600V 12A 3-Pin3+Tab TO-220
TME:
Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Verical:
Trans MOSFET N-CH 600V 12A 3-Pin3+Tab TO-220 Tube
额定功率 104 W
通道数 1
针脚数 3
漏源极电阻 0.22 Ω
极性 N-Channel
耗散功率 104 W
阈值电压 3 V
输入电容 1200 pF
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 12.0 A
上升时间 17 ns
输入电容Ciss 1200pF @100VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 104W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10 mm
宽度 4.4 mm
高度 15.65 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17