INFINEON IPG20N06S4L26ATMA1 双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
OptiMOS™ 双电源 MOSFET
欧时:
Infineon OptiMOS 系列 双 Si N沟道 MOSFET IPG20N06S4L26ATMA1, 20 A, Vds=60 V, 8引脚 TDSON封装
得捷:
MOSFET 2N-CH 60V 20A TDSON-8
立创商城:
2个N沟道 60V 20A
贸泽:
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
e络盟:
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPG20N06S4L26ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 33000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
安富利:
Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R
Verical:
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Newark:
# INFINEON IPG20N06S4L26ATMA1 Dual MOSFET, Dual N Channel, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
针脚数 8
漏源极电阻 0.021 Ω
极性 Dual N-Channel
耗散功率 33 W
阈值电压 1.7 V
输入电容 1100 pF
漏源极电压Vds 60 V
连续漏极电流Ids 20A
上升时间 1.5 ns
输入电容Ciss 1100pF @25VVds
额定功率Max 33 W
下降时间 10 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 33000 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8-4
长度 5.15 mm
宽度 5.9 mm
高度 0.75 mm
封装 PG-TDSON-8-4
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Lighting, Power Management, 照明, 工业, Industrial, Direct Fuel Injection, ABS Valves, LED and Body lighting, LED Lighting, Load Switches, Solenoid control, 电源管理, 发光二极管照明
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
