单晶体管, IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 引脚
Summary of Features:
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Lowest saturation voltage V CEsat of only 1.05V
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Low switching losses of 1.6mJ @ 25°C for 30A IGBT
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High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
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Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
Benefits:
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Higher efficiency for 50Hz
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Longer lifetime and higher reliability of IGBT
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High design reliability due to stable thermal performance
Target Applications:
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UPS
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Solar
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Welding