


INFINEON IPD042P03L3GBTMA1 晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0035 ohm, -10 V, -1.5 V
The IPD042P03L3 G is a -30V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
得捷:
MOSFET P-CH 30V 70A TO252-3
e络盟:
功率场效应管, MOSFET, P沟道, 30 V, 70 A, 0.0035 ohm, TO-252 DPAK, 表面安装
艾睿:
Trans MOSFET P-CH 30V 70A Automotive 3-Pin2+Tab DPAK T/R
富昌:
IPD042P03L3 系列 30 V 4.2 mOhm P沟道 OptiMOSTM P3 功率-晶体管 - PG-TO252-3
TME:
Transistor: P-MOSFET; unipolar; -30V; -70A; 150W; PG-TO252-3
Verical:
Trans MOSFET P-CH 30V 70A Automotive 3-Pin2+Tab DPAK T/R
额定功率 150 W
针脚数 3
漏源极电阻 0.0035 Ω
极性 P-Channel
耗散功率 150 W
阈值电压 1.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 70A
输入电容Ciss 12400pF @15VVds
工作温度Max 175 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 计算机和计算机周边, Automotive, 消费电子产品, Onboard charger, Computers & Computer Peripherals, Power Management, 电源管理, Consumer Electronics, 电机驱动与控制, Motor Drive & Control, 车用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD042P03L3GBTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD042P03L3GATMA1 英飞凌 | 完全替代 | IPD042P03L3GBTMA1和IPD042P03L3GATMA1的区别 |