双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
MOSFET - 阵列 2 N-通道(双) 100V 20A 60W 表面贴装,可润湿侧翼 PG-TDSON-8-10
欧时:
INFINEON MOSFET IPG20N10S4L22AATMA1
得捷:
MOSFET 2N-CH 100V 20A TDSON-8
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPG20N10S4L22AATMA1 power MOSFET. Its maximum power dissipation is 60000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos-t2 technology.
安富利:
Trans MOSFET N-CH 100V 20A 8-Pin TDSON T/R
Win Source:
MOSFET 2N-CH 100V 20A TDSON-8
针脚数 8
漏源极电阻 0.02 Ω
极性 N-CH
耗散功率 60 W
阈值电压 1.6 V
漏源极电压Vds 100 V
连续漏极电流Ids 20A
上升时间 3 ns
输入电容Ciss 1755pF @25VVds
额定功率Max 60 W
下降时间 18 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60000 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8-10
封装 PG-TDSON-8-10
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free