IS61LV51216-10TLI

IS61LV51216-10TLI图片1
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IS61LV51216-10TLI概述

ISSI IS61LV51216-10TLI SRAM Memory, 8Mbit, 3.135 3.6V, 10ns 44Pin TSOP

DESCRIPTION

The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:

— 8, 10, and 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mAtyp. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperatures available

• Lead-free available

IS61LV51216-10TLI中文资料参数规格
技术参数

电源电压DC 3.30 V, 3.60 V max

存取时间 10 ns

内存容量 8000000 B

工作温度Max 85 ℃

工作温度Min 40 ℃

电源电压 3.135V ~ 3.6V

电源电压Max 3.6 V

电源电压Min 3.135 V

封装参数

安装方式 Surface Mount

引脚数 44

封装 TSOP-44

外形尺寸

长度 18.52 mm

宽度 10.29 mm

高度 1.05 mm

封装 TSOP-44

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Obsolete

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

IS61LV51216-10TLI引脚图与封装图
IS61LV51216-10TLI引脚图
IS61LV51216-10TLI封装图
IS61LV51216-10TLI封装焊盘图
在线购买IS61LV51216-10TLI
型号: IS61LV51216-10TLI
制造商: Integrated Silicon SolutionISSI
描述:ISSI IS61LV51216-10TLI SRAM Memory, 8Mbit, 3.135 3.6V, 10ns 44Pin TSOP
替代型号IS61LV51216-10TLI
型号/品牌 代替类型 替代型号对比

IS61LV51216-10TLI

Integrated Silicon SolutionISSI

当前型号

当前型号

IS61WV51216EDBLL-10TLI

Integrated Silicon SolutionISSI

类似代替

IS61LV51216-10TLI和IS61WV51216EDBLL-10TLI的区别

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