ISSI IS61LV51216-10TLI SRAM Memory, 8Mbit, 3.135 3.6V, 10ns 44Pin TSOP
DESCRIPTION
The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mAtyp. CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available
电源电压DC 3.30 V, 3.60 V max
存取时间 10 ns
内存容量 8000000 B
工作温度Max 85 ℃
工作温度Min 40 ℃
电源电压 3.135V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 3.135 V
安装方式 Surface Mount
引脚数 44
封装 TSOP-44
长度 18.52 mm
宽度 10.29 mm
高度 1.05 mm
封装 TSOP-44
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Obsolete
包装方式 Tray
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IS61LV51216-10TLI Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS61WV51216EDBLL-10TLI Integrated Silicon SolutionISSI | 类似代替 | IS61LV51216-10TLI和IS61WV51216EDBLL-10TLI的区别 |