LX5506LQ

RF Amp Single Power Amp 5.85GHz 16Pin MLPQ EP

For new designs consider the LX5530LQ.

The LX5506 is a power amplifier designed for the FCC Unlicensed National Information Infrastructure U-NII band, HyperLAN2 and Japan WLAN applications in the 4.9-5.95 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit MMIC with active bias and complete on-chip input matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT IC process MOCVD. It operates at a single positive voltage supply, with +26dBm of P1dB at 3.3V and +28.5dBm of P1dB at 4.5V, across the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. For OFDM operation 64QAM, 54Mbps, the PA provides +18dBm linear output power with a very low EVM Error-Vector Magnitude of 3%, and consumes about 190mA total DC current. It delivers +21dBm output power with similar EVM levels when operated from a 4.5V supply. The LX5506 is available in a 16-pin 3mmx3mm micro-lead package MLP. The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506 an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications.

**Features**

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Advanced InGaP HBT

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Single-Polarity Voltage Supply

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EVM ~ 3% at Pout=18dBm for 64QAM/ 54Mbps OFDM3.3V

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EVM ~ 3% at Pout=21dBm for 64QAM/ 54Mbps OFDM4.5V

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P1dB ~ +26dBm3.3V

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P1dB ~ +28.5dBm4.5V

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Power Gain ~ 23dB at 5.25GHz for Icq~100mA

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Power Gain ~ 21dB at 5.85GHz for Icq~100mA

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Total Current ~190mA at Pout=18dBm at 5.25GHz3.3V

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ACPR < -50dBc at 30 MHz Offset at Pout=18dBm

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Small Gain Variation ~1dB between -40~+85°C

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Complete On-Chip Input Match

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Simple Output Capacitor Match

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Small Footprint: 3x3mm2

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Low Profile: 0.9mm