双极晶体管 - 双极结型晶体管BJT SS SC75 GP XSTR NPN 75V
Bipolar BJT Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-75, SOT-416
得捷:
TRANS NPN 40V 600MA SC75 SOT416
立创商城:
MMBT2222ATT3G
贸泽:
双极晶体管 - 双极结型晶体管BJT SS SC75 GP XSTR NPN 75V
艾睿:
The versatility of this NPN MMBT2222ATT3G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-416 T/R
Verical:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-416 T/R
频率 300 MHz
极性 NPN
耗散功率 150 mW
增益频宽积 300 MHz
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 35
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-416-3
长度 1.6 mm
宽度 0.8 mm
高度 0.75 mm
封装 SOT-416-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBT2222ATT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT2222ATT1G 安森美 | 功能相似 | MMBT2222ATT3G和MMBT2222ATT1G的区别 |
PMST2222A,115 恩智浦 | 功能相似 | MMBT2222ATT3G和PMST2222A,115的区别 |
MMBT2222AT-TP 美微科 | 功能相似 | MMBT2222ATT3G和MMBT2222AT-TP的区别 |