双极晶体管 - 双极结型晶体管BJT 200mA 40V
The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 40 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 40 V.
频率 250 MHz
额定电压DC -40.0 V
额定电流 -200 mA
极性 PNP
耗散功率 2000 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 40
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
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|---|---|---|
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