MBR360G

ON SEMICONDUCTOR  MBR360G  肖特基整流器, 单, 60 V, 3 A, 轴向引线, 2 引脚, 740 mV 新

The is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter, freewheeling and polarity protection diodes.

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Cathode indicated by polarity band

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Extremely low forward voltage

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Low power loss and high efficiency

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Highly stable oxide passivated junction

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Low stored charge and majority carrier conduction