MPSW45G

一瓦达林顿晶体管NPN硅 One Watt Darlington Transistors NPN Silicon

Higher current yields within your circuit is what you will get with "s NPN Darlington transistor. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V.