MPSA14RLRPG

达林顿晶体管NPN硅 Darlington Transistors NPN Silicon

Darlington Transistors NPN Silicon

Features

•Pb−Free Packages are Available

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得捷:
TRANS NPN DARL 30V 0.5A TO92

贸泽:
Darlington Transistors 500mA 30V NPN

艾睿:
Amplify your current with the NPN MPSA14RLRPG Darlington transistor, developed by ON Semiconductor. This Darlington transistor array&s;s maximum emitter base voltage is 10 V. This product&s;s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans Darlington NPN 30V 0.5A 3-Pin TO-92 Ammo

Verical:
Trans Darlington NPN 30V 0.5A 625mW 3-Pin TO-92 Fan-Fold

Win Source:
Darlington Transistors NPN Silicon