MCPH NPN 30V 3A
- 双极 BJT - 单 NPN 30 V 3 A 450MHz 800 mW 表面贴装型 3-MCPH
立创商城:
NPN 30V 3A
得捷:
TRANS NPN 30V 3A 3MCPH
贸泽:
Bipolar Transistors - BJT BIP NPN 3A 30V
艾睿:
Look no further than ON Semiconductor&s;s NPN MCH3209-TL-E general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
Verical:
Trans GP BJT NPN 30V 3A 800mW 3-Pin MCPH T/R
频率 450 MHz
极性 NPN
耗散功率 0.8 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 3A
最小电流放大倍数hFE 200 @500mA, 2V
额定功率Max 800 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 800 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
封装 SOT-323-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free