互补功率晶体管 Complementary Power Transistors
Complementary Power Transistors
**DPAK For Surface Mount Applications**
Designed for general purpose amplifier and low speed switching applications.
**Features**
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves “1” Suffix
• Lead Formed Version in 16 mm Tape and Reel “T4” Suffix
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V
频率 3 MHz
额定电压DC -40.0 V
额定电流 -3.00 A
极性 NPN, PNP
耗散功率 1.56 W
增益频宽积 3 MHz
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 10 @3A, 4V
额定功率Max 1.56 W
直流电流增益hFE 10
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1560 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJD32T4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD32RLG 安森美 | 类似代替 | MJD32T4G和MJD32RLG的区别 |
NJVMJD32T4G 安森美 | 类似代替 | MJD32T4G和NJVMJD32T4G的区别 |
MJD32CT4 意法半导体 | 功能相似 | MJD32T4G和MJD32CT4的区别 |