高电压功率晶体管 High Voltage Power Transistors
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
额定电压DC 300 V
额定电流 500 mA
极性 NPN
耗散功率 15 W
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 30 @50mA, 10V
额定功率Max 1.56 W
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1560 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD340RLG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD340TF 飞兆/仙童 | 完全替代 | MJD340RLG和MJD340TF的区别 |
MJD340T4G 安森美 | 类似代替 | MJD340RLG和MJD340T4G的区别 |
MJD340G 安森美 | 类似代替 | MJD340RLG和MJD340G的区别 |