MJD127-TP

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MJD127-TP概述

DPAK PNP 100V 8A

Are traditional transistors not providing enough of a current gain? The PNP Darlington transistor from can help. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. This product"s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@4A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@80mA@8A V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

MJD127-TP中文资料参数规格
技术参数

极性 PNP

耗散功率 1500 mW

击穿电压集电极-发射极 100 V

集电极最大允许电流 8A

最小电流放大倍数hFE 1000 @4A, 4V

额定功率Max 1.5 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1500 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MJD127-TP
型号: MJD127-TP
描述:DPAK PNP 100V 8A
替代型号MJD127-TP
型号/品牌 代替类型 替代型号对比

MJD127-TP

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