MJD148T4G

NPN硅功率晶体管 NPN Silicon Power Transistor

- 双极 BJT - 单 NPN 3MHz 表面贴装型 DPAK

得捷:
TRANS NPN 45V 4A DPAK

立创商城:
MJD148T4G

贸泽:
Bipolar Transistors - BJT 4A 45V 20W NPN

艾睿:
The versatility of this NPN MJD148T4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 45V 4A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans GP BJT NPN 45V 4A 1750mW 3-Pin2+Tab DPAK T/R

Verical:
Trans GP BJT NPN 45V 4A 1750mW 3-Pin2+Tab DPAK T/R

Newark:
# ON SEMICONDUCTOR  MJD148T4G  Bipolar BJT Single Transistor, General Purpose, NPN, 45 V, 3 MHz, 1.75 W, 4 A, 85 hFE