功率MOSFET 20安培, 60伏特N沟道DPAK Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
•Avalanche Energy Specified
•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDSonSpecified at Elevated Temperature
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MTD20N06HD ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MTD20N06HDL 安森美 | 类似代替 | MTD20N06HD和MTD20N06HDL的区别 |
NTD5867NLT4G 安森美 | 功能相似 | MTD20N06HD和NTD5867NLT4G的区别 |
NTD20N06LT4G 安森美 | 功能相似 | MTD20N06HD和NTD20N06LT4G的区别 |