MTD20N06HD

MTD20N06HD概述

功率MOSFET 20安培, 60伏特N沟道DPAK Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

•Avalanche Energy Specified

•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

•Diode is Characterized for Use in Bridge Circuits

•IDSSand VDSonSpecified at Elevated Temperature

MTD20N06HD中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 60 V

连续漏极电流Ids 20A

封装参数

安装方式 Surface Mount

封装 DPAK

外形尺寸

封装 DPAK

其他

产品生命周期 Unknown

数据手册

在线购买MTD20N06HD
型号: MTD20N06HD
制造商: ON Semiconductor 安森美
描述:功率MOSFET 20安培, 60伏特N沟道DPAK Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
替代型号MTD20N06HD
型号/品牌 代替类型 替代型号对比

MTD20N06HD

ON Semiconductor 安森美

当前型号

当前型号

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