MJE271G

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MJE271G概述

ON SEMICONDUCTOR  MJE271G  达林顿双极晶体管

Increase the current gain in your circuit by using "s PNP Darlington transistor. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@20mA@3V|1500@120mA@10 V. It has a maximum collector emitter saturation voltage of 2@0.2mA@20mA|3@1.2mA@120mA V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

MJE271G中文资料参数规格
技术参数

额定电压DC -100 V

额定电流 -2.00 A

无卤素状态 Halogen Free

针脚数 3

极性 PNP

耗散功率 1.5 W

击穿电压集电极-发射极 100 V

集电极最大允许电流 2A

最小电流放大倍数hFE 1500 @120mA, 10V

额定功率Max 1.5 W

直流电流增益hFE 1500

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 6MHz Min

耗散功率Max 1500 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-126-3

外形尺寸

长度 7.74 mm

宽度 2.66 mm

高度 11.04 mm

封装 TO-126-3

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Box

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE271G
型号: MJE271G
描述:ON SEMICONDUCTOR  MJE271G  达林顿双极晶体管
替代型号MJE271G
型号/品牌 代替类型 替代型号对比

MJE271G

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BD682G

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