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Increase the current gain in your circuit by using "s PNP Darlington transistor. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@20mA@3V|1500@120mA@10 V. It has a maximum collector emitter saturation voltage of 2@0.2mA@20mA|3@1.2mA@120mA V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
额定电压DC -100 V
额定电流 -2.00 A
无卤素状态 Halogen Free
针脚数 3
极性 PNP
耗散功率 1.5 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 1500 @120mA, 10V
额定功率Max 1.5 W
直流电流增益hFE 1500
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 6MHz Min
耗散功率Max 1500 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
长度 7.74 mm
宽度 2.66 mm
高度 11.04 mm
封装 TO-126-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Box
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJE271G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BD682G 安森美 | 类似代替 | MJE271G和BD682G的区别 |
MJE271 安森美 | 类似代替 | MJE271G和MJE271的区别 |