MTD6N20ET4G

ON SEMICONDUCTOR  MTD6N20ET4G  晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V

N 通道功率 MOSFET，100V 至 1700V，

得捷:
MOSFET N-CH 200V 6A DPAK

欧时:
### N 通道功率 MOSFET，100V 至 1700V，ON Semiconductor### MOSFET 晶体管，ON Semiconductor

e络盟:
ON SEMICONDUCTOR  MTD6N20ET4G  晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V

艾睿:
Make an effective common source amplifier using this MTD6N20ET4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 50000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
MTD6N20ET4G N-channel MOSFET Transistor, 6 A, 200 V, 3-Pin DPAK

安富利:
Trans MOSFET N-CH 200V 6A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans MOSFET N-CH 200V 6A 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 200V 6A 3-Pin2+Tab DPAK T/R

力源芯城:
6A,200V,DPAK-4,N沟道功率MOSFET

Win Source:
MOSFET N-CH 200V 6A DPAK

DeviceMart:
MOSFET N-CH 200V 6A DPAK