ON SEMICONDUCTOR MMDF1N05ER2G 双路场效应管, MOSFET, 双N沟道, 2 A, 50 V, 0.3 ohm, 10 V, 3 V
N 通道功率 MOSFET,50V,
得捷:
MOSFET 2N-CH 50V 2A 8SOIC
欧时:
### N 通道功率 MOSFET,50V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
贸泽:
MOSFET NFET SO8D 50V 200mA 300mOhm
e络盟:
# ON SEMICONDUCTOR MMDF1N05ER2G 双路场效应管, MOSFET, 双N沟道, 2 A, 50 V, 0.3 ohm, 10 V, 3 V
艾睿:
Amplify electronic signals and switch between them with the help of ON Semiconductor&s;s MMDF1N05ER2G power MOSFET. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MMDF1N05ER2G, NFET SO8 50V 2A 300MOHM
Verical:
Trans MOSFET N-CH 50V 2A 8-Pin SOIC N T/R
Newark:
# ON SEMICONDUCTOR MMDF1N05ER2G Dual MOSFET, Dual N Channel, 2 A, 50 V, 0.3 ohm, 10 V, 3 V
DeviceMart:
MOSFET N-CHAN DUAL 2A 50V 8SOIC
Win Source:
MOSFET 2N-CH 50V 2A 8SOIC
额定电压DC 50.0 V
额定电流 1.00 A
通道数 2
针脚数 8
漏源极电阻 0.3 Ω
极性 N-Channel, Dual N-Channel
耗散功率 2 W
阈值电压 3 V
漏源极电压Vds 50 V
漏源击穿电压 50.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 2.00 A
上升时间 30 ns
输入电容Ciss 330pF @25VVds
额定功率Max 2 W
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMDF1N05ER2G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMDF1N05ER2 安森美 | 类似代替 | MMDF1N05ER2G和MMDF1N05ER2的区别 |
NDS9945 安森美 | 类似代替 | MMDF1N05ER2G和NDS9945的区别 |
IRF7103PBF 英飞凌 | 功能相似 | MMDF1N05ER2G和IRF7103PBF的区别 |