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The is a quad Operational Amplifier combines a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise and speeds approaching that of general-purpose BiFET devices. This device uses Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents and high slew rates make this effective device ideal for applications which have previously been reserved for BiFET and NFET products. These advantages, in combination with good common-mode rejection and supply voltage rejection, make this device a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology is available on LinCMOS™ operational amplifier, without the power penalties of bipolar technology.
输出电流 ≤30 mA
供电电流 3.8 mA
电路数 4
通道数 4
针脚数 14
耗散功率 0.95 W
共模抑制比 65 dB
输入补偿漂移 1.80 µV/K
带宽 1.7 MHz
转换速率 3.60 V/μs
增益频宽积 1.7 MHz
输入补偿电压 1.1 mV
输入偏置电流 .7 pA
工作温度Max 85 ℃
工作温度Min -40 ℃
增益带宽 2.2 MHz
耗散功率Max 950 mW
共模抑制比Min 65 dB
电源电压 4V ~ 16V
电源电压Max 16 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 14
封装 SOIC-14
封装 SOIC-14
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TLC274IDR TI 德州仪器 | 当前型号 | 当前型号 |
TLC274CDR 德州仪器 | 类似代替 | TLC274IDR和TLC274CDR的区别 |
TLC274CD 德州仪器 | 类似代替 | TLC274IDR和TLC274CD的区别 |
TLC274ID 德州仪器 | 类似代替 | TLC274IDR和TLC274ID的区别 |