TK4P60DA

TOSHIBA  TK4P60DA  功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V

The is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.

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Low drain-source ON resistance

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High forward transfer admittance

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Low leakage current

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Enhancement-mode

Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.