ON SEMICONDUCTOR MJE803G 双极晶体管
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 PNP; and MJE800, MJE802, MJE803 NPN are complementary devices.
Features
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- High DC Current Gain -
hFE = 2000 Typ @ IC = 2.0 Adc
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- Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
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- Choice of Packages -
MJE700 and MJE800 series
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- Pb-Free Packages are Available
额定电压DC 80.0 V
额定电流 4.00 A
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 40 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 4A
最小电流放大倍数hFE 750 @2A, 3V
额定功率Max 40 W
直流电流增益hFE 750
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 40000 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
封装 TO-126-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Box
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJE803G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJE803 安森美 | 完全替代 | MJE803G和MJE803的区别 |
2N6039G 安森美 | 类似代替 | MJE803G和2N6039G的区别 |
BD679AG 安森美 | 类似代替 | MJE803G和BD679AG的区别 |