TSM1NB60CP

TAIWAN SEMICONDUCTOR  TSM1NB60CP  功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V

The is a 600V N-channel Power MOSFET with single configuration, which features low gate charge. It is suitable for power supply and charger applications.

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Advanced planar process

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100% Avalanche tested

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Low RDS ON

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Low CRSS