3SK264-5-TG-E

Trans RF MOSFET N-CH 15V 0.03A Automotive 4Pin CP T/R

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in depletion mode.