3N60

超低栅极电荷、低反向传输电容、快速开关能力

DESCRIPTION

The is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

* VDS = 600V, ID = 3A

* RDSON < 3.6Ω @VGS = 10 V

* Ultra low gate charge typical 18 nC

* Low reverse transfer capacitance CRSS = typical 5.5 pF

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness