



晶体管输出光电耦合器 Photodarlington
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Features
■ High sensitivity to low input drive current
■ Meets or exceeds all JEDEC Registered Specifications
■ UL, C-UL approved, File #E90700, Volume 2
■ IEC 60747-5-2 approved ordering option V
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials and impedances
通道数 1
正向电压 1.2 V
耗散功率 250 mW
隔离电压 4170 Vrms
正向电流 80 mA
输出电压Max 30 V
输入电流Min 80 mA
击穿电压 3 V
正向电压Max 1.5 V
正向电流Max 80 mA
工作温度Max 100 ℃
工作温度Min -40 ℃
耗散功率Max 250 mW
安装方式 Through Hole
引脚数 6
封装 PDIP-6
长度 8.89 mm
宽度 6.6 mm
高度 2.54 mm
封装 PDIP-6
工作温度 -40℃ ~ 100℃
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free