71T75802S200BGGI8

71T75802S200BGGI8图片1
71T75802S200BGGI8概述

SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119Pin BGA T/R

* 512K x 36, 1M x 18 memory configurations * Supports high performance system speed - 200 MHz 3.2 ns Clock-to-Data Access * ZBTTM Feature - No dead cycles between write and read cycles * Internally synchronized output buffer enable eliminates the need to control OE * Single R/W READ/WRITE control pin * Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications * 4-word burst capability interleaved or linear * Individual byte write BW1 - BW4 control May tie active * Three chip enables for simple depth expansion * 2.5V power supply ±5% * 2.5V I/O Supply VDDQ * Power down controlled by ZZ input * Boundary Scan JTAG Interface IEEE 1149.1 Compliant * Packaged in a JEDEC standard 100-pin plastic thin quad flatpack TQFP, 119 ball grid array BGA

71T75802S200BGGI8中文资料参数规格
技术参数

电源电压 2.375V ~ 2.625V

封装参数

安装方式 Surface Mount

引脚数 119

封装 BGA-119

外形尺寸

封装 BGA-119

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买71T75802S200BGGI8
型号: 71T75802S200BGGI8
制造商: Integrated Device Technology 艾迪悌
描述:SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119Pin BGA T/R

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