71T75802S100BG8

71T75802S100BG8图片1
71T75802S100BG8概述

ZBT SRAM, 1MX18, 5ns, CMOS, PBGA119, 14 X 22MM, MS-028-AA, BGA-119

* 512K x 36, 1M x 18 memory configurations * Supports high performance system speed - 200 MHz 3.2 ns Clock-to-Data Access * ZBTTM Feature - No dead cycles between write and read cycles * Internally synchronized output buffer enable eliminates the need to control OE * Single R/W READ/WRITE control pin * Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications * 4-word burst capability interleaved or linear * Individual byte write BW1 - BW4 control May tie active * Three chip enables for simple depth expansion * 2.5V power supply ±5% * 2.5V I/O Supply VDDQ * Power down controlled by ZZ input * Boundary Scan JTAG Interface IEEE 1149.1 Compliant * Packaged in a JEDEC standard 100-pin plastic thin quad flatpack TQFP, 119 ball grid array BGA

71T75802S100BG8中文资料参数规格
技术参数

电源电压 2.375V ~ 2.625V

封装参数

引脚数 119

封装 PBGA-119

外形尺寸

长度 14.0 mm

宽度 22.0 mm

封装 PBGA-119

厚度 2.15 mm

物理参数

工作温度 0℃ ~ 70℃ TA

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买71T75802S100BG8
型号: 71T75802S100BG8
制造商: Integrated Device Technology 艾迪悌
描述:ZBT SRAM, 1MX18, 5ns, CMOS, PBGA119, 14 X 22MM, MS-028-AA, BGA-119

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