7N60A

超低栅极电荷、低反向传输电容、快速开关能力

DESCRIPTION

The is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply.

FEATURES

* RDSON= 1.2Ω @VGS= 10 V

* Ultra low gate charge typical 28 nC

* Low reverse transfer Capacitance CRSS= typical 12 pF   * Fast switching capability 

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness