74LVC1G38GM

74LVC1G38GM概述

IC 与非门 74LVC1G38GM XQFN8 marking/标记 YB

2-input NAND gate; open drain;FEATURES Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 1.65 V to 1.95 V JESD8-5 2.3 V to 2.7 V JESD8-B/JESD36 2.7 V to 3.6 V. ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V ±24 mA output drive VCC = 3.0 V CMOS low power consumption Open drain outputs Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V Multiple package options Specified from  −40 °C to +125 °C

74LVC1G38GM中文资料参数规格
封装参数

封装 SOT-886

外形尺寸

封装 SOT-886

其他

逻辑类型Logic Type 与非门 NAND Gate

电路数Number of Circuits 1

输入数Number of Inputs 2

电源电压VccVoltage - Supply 1.65V~5.5V

静态电流IqCurrent - Quiescent Max 200uA

输出高,低电平电流Current - Output High, Low -32mA,32mA

低逻辑电平Logic Level - Low 0.7V~0.8V

高逻辑电平Logic Level - High 1.7V~2V

传播延迟时间@Vcc,CLMax Propagation Delay @ V, Max CL 1.5ns @ 5V,50pF

规格书PDF __

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买74LVC1G38GM
型号: 74LVC1G38GM
制造商: NXP 恩智浦
描述:IC 与非门 74LVC1G38GM XQFN8 marking/标记 YB

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